Method for Making Aluminum Single Crystal Interconnections On Insulators > 자유게시판

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The floor or interfacial tension underneath the thermal equilibrium is determined by materials alone no matter a state thereof. FIG. 18 shows that material B on a flat material A becomes orbicular shape below a thermal equilibrium state. The fabric of the barrier metallic is such that reaction with the Si substrate is suppressed. A (100) Si single crystal eleven is used as a substrate. Even in a case where the spherically agglomerated Al islands in touch with the only-crystal interconnection could be removed at a later process, there may be remained a crystal grain boundary in a portion of the single-crystal interconnection after the elimination thereof, thus possibly contributing to the discount of wiring reliability. FIGS. 22A-22C illustrate a case where materials B is filled into the material B the place there exist both a densely positioned wiring groove and a non-densely situated wiring groove on the same machine. In order to unravel such issues, it's essential to keep away from the case where the quantity of Al to be filled within the groove is in excess of what is critical in order that the spherically agglomerated Al islands are formed and to avoid the case where the Al quantity is in in need of what is critical so that the interconnection is disconnected.

Moreover, the wiring metal is filled within the groove of the wiring area by agglomeration, and the residual excess metal film may be left in the region of no wiring. FIGS. 25A, Aluminum single wire 25B and 25C show electrode wirings the place there are provided excess metallic storing regions for storing a residual wiring metals. FIGS. 44A-44C present an electrode wiring construction where the wettability bettering layer is formed in the inner surface of the groove. FIGS. 43A-43C present electrode wiring constructions where there are provided barrier layers. FIGS. 45A-45C present an electrode wiring construction the place there's formed the wettability improving layer in the realm apart from the groove portion. FIGS. 33A-33C show the easily curved floor of the upper floor of wiring formed in accordance with the wettability between the Al and the interlayer insulator. Having good wettability implies that materials is formed onto a layer or a groove in such a fashion that: a contact angle between, say, an upper materials and a lower material disposed underneath the upper materials is comparatively low.

FIG. 34 shows the smoothly curved surface of the higher surface of wring downwardly in line with the seventh embodiment. 13A-13C show cross sectional views for making a semiconductor gadget in keeping with the fourth embodiment. FIG. 11A-11E present cross sectional views for making a semiconductor machine in response to the third embodiment. With reference to FIG. 1A, FIG. 1B and FIG. 1 C, there are proven cross sectional views for making a semiconductor gadget in response to the first embodiment of the present invention. Embodiments of the present invention will now be described with reference to the drawings. Features of the current invention will change into obvious in the course of the following description of exemplary embodiments that are given for illustration of the invention and will not be intended to be limiting thereof. Gases utilized in the RIE are mixture of CF.sub.4 and H.sub.2 which circulation at a charge of sixteen SCCM (commonplace cc per minute) and 24 SCCM, respectively. Thus, it is critical to acquire, from time and temperature, the temperature-rise fee at which agglomeration temperature is reached as shown in FIG. 3. When the temperature-rise charge is excessive, agglomeration begins throughout which almost no response product is produced.

It shall be appreciated that an arriving time within which the agglomeration doesn't occur further in the groove could also be kept as such although in the expertise carried out by the candidates this time the system is cooled in a natural manner after a temperature rise. A strain on the time of etching is controlled to forty mTorr and an utilized power on the time of etching is 800 W. Thereafter, a resist is removed in an ambiance of oxygen plasma. Thereafter, there may be obtained a big effect of suppressing the diffusion and response between W and Al, and Al and Si, respectively, so that the C movie might be utilized as a barrier layer. Ar is a gas that's utilized within the sputtering, a background pressure is less than 10.sup.-Eight Torr, a stress beneath sputtering is 3.times.10.sup.-3 Torr, and an utilized power is 6 KW, so as to kind movie suppressing the formation of the native oxide film. Then, gasoline utilized in the etching was CF.sub.4, an etching pressure was 7.8 mTorr, and the applied energy was 50 W. By the RIE, the bottom face and aspect face of the groove are made so that wettability thereof is sweet.