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The ninth embodiment is characterized in that there is no crystal grain boundary in a connecting portion of the higher and decrease layers or a bending portion. Therefore, the atoms at the floor or grain boundary of the movie may be easily diffused with a small quantity of vitality. When the native oxide film is formed on the floor of wiring steel movie in the course of the above process, the native oxide movie shall be eliminated. When other material corresponding to Cu, Ag and At aside from the Al is used because the wiring steel, a wettability improving layer having a superb wettability relative to the metal chosen shall be chosen to have the identical impact in the Al and C movie. Then, gasoline utilized in the etching was CF.sub.4, an etching strain was 7.Eight mTorr, and the utilized power was 50 W. By the RIE, the underside face and aspect face of the groove are made so that wettability thereof is good.

As for materials comparable to Cu and Ag which have a lower resistance than Al-containing materials, it is tough to type a compound having a excessive vapor stress. However, there is a restrict in a fabric by way of the low resistance in the standard Al alloy interconnection, in order that a change to a brand new wiring material is necessary. S.sub.A, S.sub.AB and S.sub.B are a floor space of the fabric A, an interfacial space between the material A and materials B, and a surface area of the material B, respectively, within the system thereof. According to a different side of the present invention, there's offered a method of producing a semiconductor machine comprising the steps of: forming a groove having a predetermined sample shape on the floor of a substrate; forming a metallic film on the substrate; selectively eradicating the steel movie formed in an space aside from the groove; eradicating a local oxide movie formed on the metal film; and agglomerating the steel movie by annealing in an vacuum environment in order to fill in the metal film into the groove whereas re-formation of the native oxide film is suppressed.

Thereafter, annealing is performed in order that the metallic skinny movie is filled into the groove by agglomeration. In a single side of the current invention, there's offered a technique for making single-crystal aluminum interconnection, the tactic includes the steps of forming a groove having a predetermined pattern form on the floor of a substrate; forming a steel movie on the substrate whereas reaction with the surface of the substrate is suppressed; and agglomerating the metallic film by in-situ annealing, whereby agglomeration of the metal movie is began earlier than the metallic movie reacts with the floor of the substrate attributable to annealing, whereas formation of a local oxide on the metal movie is suppressed, and whereby the metal movie is crammed into the groove by annealing at a predetermined temperature for a predetermined time period. The depletion of atom may cause a disconnection of interconnection, and the accumulation of atom might cause hillocks.

In other words, there happens a depletion of atom in an upstream aspect the place the Al atom flows aside from the crystal boundary, and there happens an accumulation of atom in a downstream side. Therefore, in a cathode facet of the W plug, the Al atoms transferred through the interconnection are accumulated and the hillock is formed, whereas, in an anode facet of the plug, the Al atoms are depleted and the void is formed. With reference to FIG. 16C, the grooves might also be organized in a noticed shape in a manner that an angle between the neighboring sides, an angle between a facet and an extended line of the other side, and an angle of extended line of each facet are all 60 degrees. FIG. 7B exhibits that a bent portion of wiring 20 is bent in an angle of 60 and one hundred twenty degrees. FIG. 7A reveals that a bent portion of wiring 20 is bent in an angle of 120 levels. FIG. 4 shows a relationship between a production rate of a reaction product by an oxide film and Al, and temperature thereof, by way of logarithmic graph. FIG. 4 reveals relationship between a manufacturing price of a response product by an oxide movie as a substrate and Al, and temperature thereof, in terms of logarithmic graph.

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